| 摘要 |
A semiconductor memory device includes an internal voltage generating circuit and a memory cell. The internal voltage generating circuit is configured to compare a temperature voltage, which has a level varying with a predetermined slope according to a level change of an internal voltage, with a variable reference voltage, which has a level varying according to a temperature change, and pump the internal voltage. The memory cell includes a cell transistor having a threshold voltage controlled according to the internal voltage. |
