发明名称 SEMICONDUCTOR DEVICE INCLUDING DIODE
摘要 <P>PROBLEM TO BE SOLVED: To improve trade-off between a reverse recovery behavior and an on-state characteristic of a diode in a semiconductor device including the diode. <P>SOLUTION: A semiconductor device 200 includes a cathode 216 and an anode 218. The anode includes a first p-type semiconductor anode region 204 and a second p-type semiconductor anode region 206. The first p-type semiconductor anode region 204 is electrically connected to an anode contact area 218. The second p-type semiconductor anode region 206 is electrically coupled to the anode contact area 218 via a switch, such as a MOSFET 228, configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area 218. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012146977(A) 申请公布日期 2012.08.02
申请号 JP20110282710 申请日期 2011.12.26
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HANS-GUENTER ECKEL;JOERG SCHUMANN
分类号 H01L29/868;H01L21/8234;H01L27/06;H01L27/088;H01L29/47;H01L29/861;H01L29/872 主分类号 H01L29/868
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