发明名称 |
SEMICONDUCTOR DEVICE INCLUDING DIODE |
摘要 |
<P>PROBLEM TO BE SOLVED: To improve trade-off between a reverse recovery behavior and an on-state characteristic of a diode in a semiconductor device including the diode. <P>SOLUTION: A semiconductor device 200 includes a cathode 216 and an anode 218. The anode includes a first p-type semiconductor anode region 204 and a second p-type semiconductor anode region 206. The first p-type semiconductor anode region 204 is electrically connected to an anode contact area 218. The second p-type semiconductor anode region 206 is electrically coupled to the anode contact area 218 via a switch, such as a MOSFET 228, configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area 218. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012146977(A) |
申请公布日期 |
2012.08.02 |
申请号 |
JP20110282710 |
申请日期 |
2011.12.26 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HANS-GUENTER ECKEL;JOERG SCHUMANN |
分类号 |
H01L29/868;H01L21/8234;H01L27/06;H01L27/088;H01L29/47;H01L29/861;H01L29/872 |
主分类号 |
H01L29/868 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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