| 摘要 |
A semiconductor device including an n-channel-type MISFET (Qn) having an Hf-containing insulating film (5), which is a high dielectric constant gate insulating film containing hafnium, a rare-earth element, and oxygen as main components, and a gate electrode (GE1), which is a metal gate electrode, is manufactured. The Hf-containing insulating film (5) is formed by forming a first Hf-containing film containing hafnium and oxygen as main components, a rare-earth containing film containing a rare-earth element as a main component, and a second Hf-containing film containing hafnium and oxygen as main components sequentially from below and then causing these to react with one another.
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