发明名称 3D Semiconductor Device
摘要 A three dimensional semiconductor device is described with two transistor layers overlaid. The first transistor layer comprises a plurality of flip-flops each having an input and an output, wherein the inputs are selectively coupleable to the second transistor layer.
申请公布号 US2012194216(A1) 申请公布日期 2012.08.02
申请号 US20100904108 申请日期 2010.10.13
申请人 发明人 OR-BACH ZVI;WURMAN ZE'EV
分类号 H01L25/00 主分类号 H01L25/00
代理机构 代理人
主权项
地址