发明名称 CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
摘要 A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.
申请公布号 WO2012040440(A3) 申请公布日期 2012.08.02
申请号 WO2011US52725 申请日期 2011.09.22
申请人 FIRST SOLAR, INC.;LEE, CHUNGHO;ZHAO, ZHIBO;BULLER, BENYAMIN;SHAO, RUI 发明人 LEE, CHUNGHO;ZHAO, ZHIBO;BULLER, BENYAMIN;SHAO, RUI
分类号 H01L31/0224;H01L31/073 主分类号 H01L31/0224
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