METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

Provided is a method that is for producing a semiconductor device and that is provided with: a first sacrificial layer forming step for forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and that has a higher solid solubility of impurities contained in the first semiconductor layer than that of the first semiconductor layer; an annealing step for annealing the first sacrificial layer and the first semiconductor layer; an elimination step for eliminating the first sacrificial layer via a wet process; a step for forming an insulating layer that covers at least a portion of the first semiconductor layer and/or a step for etching a portion of the first semiconductor layer; and an electrode-forming step for forming an electrode layer that is electrically connected to the first semiconductor layer.