摘要 |
<p>A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.</p> |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHARNS, LESLIE;CUMMINGS, JASON, E.;HUPKA, LUKASZ, J.;KOLI, DINESH, R.;KONNO, TOMOHISA;KRISHNAN, MAHADEVAIYER;LOFARO, MICHAEL, F.;NALASKOWSKI, JAKUB;NODA, MASAHIRO;PENIGALAPATI, DINESH;YAMANAKA, TATSUYA |
发明人 |
CHARNS, LESLIE;CUMMINGS, JASON, E.;HUPKA, LUKASZ, J.;KOLI, DINESH, R.;KONNO, TOMOHISA;KRISHNAN, MAHADEVAIYER;LOFARO, MICHAEL, F.;NALASKOWSKI, JAKUB;NODA, MASAHIRO;PENIGALAPATI, DINESH;YAMANAKA, TATSUYA |