| 摘要 |
PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve light extraction efficiency by increasing an amount of light extracted in the edges of the semiconductor light emitting device. CONSTITUTION: A semiconductor layer(205) is formed on a substrate(210). The semiconductor layer includes a first semiconductor layer(230), an active layer(240), and a second semiconductor layer(250). A current diffusion electrode(260) is formed on the second semiconductor layer. A p side electrode(270) is formed on the current diffusion electrode. An n side electrode(280) is formed on the exposed first semiconductor layer.
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