| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power switching device which has higher breakdown voltage and lower on-resistance, and functions satisfactorily at high frequency. <P>SOLUTION: A multiple field plate transistor comprises an active region, a source, a drain, and a gate. A first spacer layer is formed over the active region and between the source and the gate, and a second spacer layer is formed over the active region and between the drain and the gate. A first field plate on the first spacer layer and a second field plate on the second spacer layer are connected to the gate. A third spacer layer is formed on the first spacer layer, the second spacer layer, the first field plate, the gate, and the second field plate. A third field plate is formed on the third spacer layer and connected to the source. <P>COPYRIGHT: (C)2012,JPO&INPIT |
