| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently calculate the yield of a semiconductor device with high accuracy. <P>SOLUTION: The image data on a semiconductor wafer 2 having a thin film uniformly formed thereon is acquired, and defects formed in the thin film are extracted using defect identification data 38 formed for every type of a semiconductor device and a product pattern 39. The defect identification data 38 is the information on the defect size to affect electrical characteristics of the semiconductor device. The product pattern 38 is a pattern which masks a sparse region of a circuit pattern. Furthermore, the estimated value of the yield rate is calculated from the number of chips in which the extracted defects exist, and the goodness/badness of the semiconductor wafer 2 is determined as compared with a specified yield rate required for the type of the semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
