| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having an infrared pixel capable of receiving infrared light, as well as a red pixel, a green pixel, and a blue pixel. <P>SOLUTION: In a solid-state imaging device, N-type impurity layers 11, 12, 13, and 14 for accumulating charges generated by photoelectric conversion are provided, and P-type impurity layers 15, 16, 17, and 18 for shielding a surface of a P-type silicon semiconductor substrate 10 and for suppressing dark current of a photo diode are provided on each surface side of the N-type impurity layers 11, 12, 13, and 14. Color filters 26, 27, 28, and 29 separating incident light into red light, green light, blue light, and infrared light are arranged closer to an upper side (an object to be imaged side) than a light receiving surface of the P-type silicon semiconductor substrate 10 so as to achieve pixel arrangement. The solid-state imaging device further comprises a red pixel 31, a green pixel 32, a blue pixel 33, and an infrared pixel 34. <P>COPYRIGHT: (C)2012,JPO&INPIT |
