发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To inhibit leakage current more than before. <P>SOLUTION: A semiconductor device 1 of the present invention comprises an input terminal 10 to which a signal can be supplied from outside, an internal circuit 30, a control unit 40 and a buffer circuit 20. The control unit 40 outputs a mask cancellation signal MASK"H" by the time a predetermined elapsed time from the time of start-up passes. The buffer circuit 20 outputs a signal representing a voltage VDD or a voltage GND supplied to the input terminal 10 to the internal circuit 30 in accordance with the mask cancellation signal MASK"H". In the semiconductor device 1 of the present invention, even though a noise occurs while a signal is being supplied to the input terminal 10 from outside, the buffer circuit 20 disables transfer from the input terminal 10 to the internal circuit 30 except during a period enabling the transfer. Accordingly, separation of the buffer circuit 20 and the internal circuit 30 by a mask circuit 26 can inhibit through-current to the internal circuit 30. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012147289(A) 申请公布日期 2012.08.02
申请号 JP20110004623 申请日期 2011.01.13
申请人 RENESAS ELECTRONICS CORP 发明人 WADA YOSHITAKA
分类号 H03K19/0175;H01L21/822;H01L27/04 主分类号 H03K19/0175
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