| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a forming method of an amorphous silicon film capable of further improving precision of surface roughness and coping with progress of miniaturization of contact holes and lines or the like. <P>SOLUTION: A forming method of an amorphous silicon film comprises a step of forming a seed layer 3 on a surface of a base 2 by heating the base 2 and flowing aminosilane-based gas to the heated base 2 and a step of forming an amorphous silicon film on the seed layer 3 by heating the base 2, supplying silane-based gas containing no amino group to the seed layer 3 on a surface of the heated base 2, and thermally decomposing the silane-based gas containing no amino group. In the forming method, aminosilane of the aminosilane-based gas is adsorbed on the base without being thermally decomposed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
