发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes a main word line signal generator configured to generate a main word line signal having a first swing width, a sub-word line signal generator configured to generate a first sub-word line signal and a second sub-word line signal having a second swing width and a third swing width, respectively, a first sub-word line driver configured to drive a corresponding sub-word line with the first sub-word line signal or a negative word line voltage in response to the main word line signal, and a second sub-word line driver configured to drive the corresponding sub-word line with the negative word line voltage in response to the second sub-word line signal.
申请公布号 US2012195142(A1) 申请公布日期 2012.08.02
申请号 US201113198306 申请日期 2011.08.04
申请人 LEE DONG-GEUN;DO CHANG-HO 发明人 LEE DONG-GEUN;DO CHANG-HO
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址