MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a technique for obtaining an epitaxial film of good quality by reducing etching damage on a surface of a substrate when growing the epitaxial film.

SOLUTION: A manufacturing method of a semiconductor device comprises: a step of transferring a substrate having an insulator surface and a semiconductor surface on its surface into a processing chamber; an etching step of etching the semiconductor surface of the substrate by supplying hydrogen-containing gas and chlorine-containing gas to the substrate transferred into the processing chamber; a first purge step of purging residual chlorine on the surface of the substrate by supplying the hydrogen-containing gas to the etched substrate; and a film formation step of forming a silicon-containing film on the semiconductor surface of the substrate by supplying silicon-containing gas to the substrate from which the residual chlorine was purged. This manufacturing method continuously performs a step including the etching step and the first purge step twice or more.

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