| 摘要 |
According to one embodiment, a semiconductor device includes N fins made of a semiconductor material aligned in parallel with each other; a first gate electrode formed on both side surfaces of each of the N fins to cross the fins; and a second gate electrode formed in parallel with the first gate electrode on both side surfaces of the N fins to cross the fins, and having a larger gate length than a gate length of the first gate electrode, wherein number of fins formed with contacts of source/drain layers of first field-effect transistors having the first gate electrode is larger than number of fins formed with contacts of source/drain layers of second field-effect transistors having the second gate electrode. |
