| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ultraviolet sensor element excellent in ultraviolet detection capability even when manufactured using an inexpensive material and a simple facility. <P>SOLUTION: In the ultraviolet sensor element, an n-type semiconductor layer comprising titanium oxide or zinc oxide and a p-type semiconductor layer comprising nickel oxide are laminated, and the n-type semiconductor layer and the p-type semiconductor layer form a pn-junction. The film thickness of the n-type semiconductor layer is 0.5-15 μm, and the film thickness of the p-type semiconductor layer is 1-30 μm. <P>COPYRIGHT: (C)2012,JPO&INPIT |
