A semiconductor laser includes: a DBR (Distributed Bragg Reflector) region having a diffraction grating; a FP (Fabry-Perot) region having no diffraction grating; and an optical waveguide section placed between the DBR region and an outputting end surface. A length of the optical waveguide section is longer than a length of the DBR region in a resonator length direction.
申请公布号
US2012195337(A1)
申请公布日期
2012.08.02
申请号
US201113217430
申请日期
2011.08.25
申请人
SHIGIHARA KIMIO;MARUYAMA TAKUTO;OHNO AKIHITO;MITSUBISHI ELECTRIC CORPORATION