发明名称 SEMICONDUCTOR LASER
摘要 A semiconductor laser includes: a DBR (Distributed Bragg Reflector) region having a diffraction grating; a FP (Fabry-Perot) region having no diffraction grating; and an optical waveguide section placed between the DBR region and an outputting end surface. A length of the optical waveguide section is longer than a length of the DBR region in a resonator length direction.
申请公布号 US2012195337(A1) 申请公布日期 2012.08.02
申请号 US201113217430 申请日期 2011.08.25
申请人 SHIGIHARA KIMIO;MARUYAMA TAKUTO;OHNO AKIHITO;MITSUBISHI ELECTRIC CORPORATION 发明人 SHIGIHARA KIMIO;MARUYAMA TAKUTO;OHNO AKIHITO
分类号 H01S5/30 主分类号 H01S5/30
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