METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT

摘要

A method for manufacturing a heterojunction field effect transistor (1) comprising: a step for epitaxially growing a drift layer (20a) on a support substrate (10); a step for epitaxially growing a current-blocking layer (20b), which is a p-type semiconductor layer, on the drift layer (20a) at 1000°C or higher using hydrogen gas as a carrier gas; and a step for epitaxially growing a contact layer (20c) on the current-blocking layer (20b) using, as a carrier gas, at least one gas selected from the group consisting of nitrogen gas, argon gas, helium gas, and neon gas. This makes it possible to reduce drain leakage electric current and minimize any decrease in pinch-off characteristics because the acceptor concentration of the current-blocking layer (20b) is kept from becoming insufficient.