METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

摘要

A method for forming a semiconductor structure comprises steps: forming a dummy gate (206) on a semiconductor substrate (202); forming source/drain areas (208) and a channel area (214) circling around the side wall (212) of the dummy gate (206); removing the dummy gate (206) to form a gate gap (222); forming a stress material layer (226) inside of the gate gap (222); annealing the semiconductor substrate (202); removing the stress material layer (226) inside of the gate gap (222); and forming a gate electrode (230) in the gate gap (222).