| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element having a wide light-emitting region by improving current spread in the lateral direction. <P>SOLUTION: A nitride semiconductor light-emitting element comprises: an n-side nitride semiconductor 20; an active layer 30 that is formed on the n-side nitride semiconductor 20 and has a quantum well structure including a quantum well layer 32 and a barrier layer 31; and a p-side nitride semiconductor 40 formed on the active layer 30. The quantum well layer 32 and the barrier layer 31 in the active layer 30 are each composed of a nitride semiconductor containing Al. The n-side nitride semiconductor 20 comprises a nitride semiconductor layer 21 having a -c plane (nitrogen polarity) as a primary surface 21a and an Al composition inclined layer 22 formed on the active layer 30 side with respect to the nitride semiconductor layer 21. <P>COPYRIGHT: (C)2012,JPO&INPIT |
