| 发明名称 |
SEMICONDUCTOR CIRCUIT AND DRIVING METHOD THEREFOR, AND STORAGE DEVICE, REGISTER CIRCUIT, DISPLAY UNIT AND ELECTRONIC APPARATUS |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a semiconductor circuit capable of holding a threshold voltage of a transistor to an optimum value and controlling a threshold voltage of a transistor; a driving method therefor; and a storage device, display unit and electronic apparatus to which the semiconductor circuit is applied. <P>SOLUTION: A diode and a first capacitative element are provided for a node connected to a back gate of a transistor to be controlled, and a desired voltage can be applied so that a threshold voltage of the transistor is optimum and the voltage can be held. In addition, it is sufficient if a second capacitative element connected in parallel to the diode is provided to temporarily change a voltage of the node. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012146965(A) |
申请公布日期 |
2012.08.02 |
| 申请号 |
JP20110277023 |
申请日期 |
2011.12.19 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ENDO MASAMI;OSHIMA KAZUAKI |
| 分类号 |
H01L21/8242;G02F1/133;G02F1/1345;G02F1/1368;H01L21/336;H01L21/822;H01L21/8234;H01L21/8244;H01L21/8247;H01L27/04;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L27/11;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8242 |
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