Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g. < 500°C) relative to prior art techniques. The availability of a bias plasma power adjustment further enables adjustment of conformality of the formed polysilicon layer. When dopants are included in the high density plasma, they may be incorporated into the polysilicon layer in such a way that they do not require a separate activation step.
申请公布号
WO2012102809(A2)
申请公布日期
2012.08.02
申请号
WO2011US66601
申请日期
2011.12.21
申请人
APPLIED MATERIALS, INC.;WANG, ANCHUAN;CHEN, XIAOLIN;LEE, YOUNG S.