Provided is a thin film vapor deposition method capable of vapor depositing a thin film with increased productivity over a conventional ALD or cyclic CVD. According to the present invention, the thin film vapor deposition method uses a thin film vapor deposition apparatus comprising: a substrate support portion comprising a plurality of substrate mounting portions for mounting substrates and provided inside a reactor; and a gas spraying portion for supplying one or more types of gases to the substrate support portion, provided at the upper portion of the substrate support portion. The thin film vapor deposition method comprises the following steps: (a) mounting a plurality of substrates on the substrate support portion; (b) supplying a raw material gas and a reaction gas to be reacted with the raw material gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion to vapor deposit a thin film on the substrates; (c) supplying an inert gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion, for purging; and (d) supplying a post-treatment gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion, for post-treatment.
