| 发明名称 |
DEPOSITION OF ALKALINE EARTH METAL FLUORIDE FILMS IN GAS PHASE AT LOW TEMPERATURE |
| 摘要 |
Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF2, at temperatures ranging from about 25C to about 300°C, preferably from about 50°C to about 250°C, and more preferably from about 100°C to about 200°C. |
| 申请公布号 |
WO2012074511(A3) |
申请公布日期 |
2012.08.02 |
| 申请号 |
WO2010US58340 |
申请日期 |
2010.11.30 |
| 申请人 |
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;KO, CHANGHEE;GATINEAU, JULIEN;DUSSARRAT, CHRISTIAN |
发明人 |
KO, CHANGHEE;GATINEAU, JULIEN;DUSSARRAT, CHRISTIAN |
| 分类号 |
H01L21/205;H01L21/31 |
主分类号 |
H01L21/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
