SOI SUBSTRATE, METHOD OF MANUFACTURING THE SOI SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

Disclosed is an SOI substrate which includes a semiconductor base; a semiconductor layer formed over the semiconductor base; and a buried insulating film which is disposed between the semiconductor base and the semiconductor layer, so as to electrically isolate the semiconductor layer from the semiconductor base, where the buried insulating film contains a nitride film.