| 摘要 |
A gate electrode, an element isolation film and a drain region in an LDMOS transistor formation region and a gate electrode, an element isolation film and an anode region in an ESD protection element formation region are formed to satisfy relationships of A1≧A2 and B1<B2 where the LDMOS transistor formation region has an overlap length A1 of the gate electrode and the element isolation film and a distance B1 between the gate electrode and the drain region, and the ESD protection element formation region has an overlap length A2 of the gate electrode and the element isolation film and a distance B2 between the gate electrode and the anode region. |
