A DISTRIBUTED BRAGG REFLECTOR(DBR) USING SILICON AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A DBR(Distributed Bragg Reflector) structure and a manufacturing method thereof are provided to prevent the generation of cracks due to the use of different kinds of materials having different expansion coefficients. CONSTITUTION: A DBR structure using silicon comprises a substrate(100), first silicon layers(200,210,220) corresponding to a silicon layer having a low refractive index and second silicon layers(300,310,320) corresponding to the silicon layer having a high refractive index. The substrate consists of a glass substrate or a semiconductor substrate. The first silicon layer has a refractive index lower than that of the second silicon layer. The first silicon layer and second silicon layer are formed by oblique vapor deposition. The first silicon layer controls a refractive index by diagonally depositing silicon on the substrate. The second silicon layer is vertically deposited on a plane of the substrate.