发明名称 ETCHING SOLUTION COMPOSITION FOR METAL THIN FILM CONSISTING PRIMARILY OF COPPER
摘要 PURPOSE: An etchant composition is provided to form excellent pattern shape by etch-processing with high accuracy a metal laminate film pattern comprising a copper and copper alloy thin film. CONSTITUTION: An etchant composition is formed by etching a metal laminate layer comprising a layer consisting of a copper layer, cooper alloy(but, alloy consisting of copper, molybdenum and/or titanium is excluded), and mixing 40-60 weight% of phosphoric acid, 1.5-4.0 weight% of phosphoric acid, 25-45 weight% of acetic acid, and water. The metal laminate layer consists of a constitution of copper/copper alloy, or copper alloy/copper/copper alloy. The cooper alloy contacts to a substrate. The copper alloy is copper-magnesium-aluminum, or copper-magnesium-aluminum oxide.
申请公布号 KR20120086276(A) 申请公布日期 2012.08.02
申请号 KR20120007398 申请日期 2012.01.25
申请人 KANTO KAGAKU KABUSHIKI KAISHA 发明人 OHSHIRO KENJI;KOUNO RYOU;TAKAHASHI HIDEKI
分类号 C09K13/06;C09K13/04 主分类号 C09K13/06
代理机构 代理人
主权项
地址