发明名称 DEPOSITION METHOD AND DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a deposition method and a deposition apparatus, with which thermal degradation of a polymer is suppressed and deposition is suitably achieved on a surface of the polymer. <P>SOLUTION: Gaseous ozone which is an oxidizing agent and TEOS which is a raw material for an oxide are supplied to a supercritical fluid, and SiO<SB POS="POST">2</SB>which is the oxide is generated by heating a structure 1 and a periphery thereof at a temperature of 200&deg;C, and an SiO<SB POS="POST">2</SB>layer which is an oxide layer 5 is formed on an entire surface of an inner wall of a microchannel 3 of the structure 1 (that is, on a surface of a PDMS membrane 9 which is the polymer) with this SiO<SB POS="POST">2</SB>. Thereby, the oxide layer 5 is formed at a temperature lower than that in a conventional method, and as a result, a remarkable effect of not causing a problem such as degradation of the polymer is achieved. Moreover, because the oxide layer 5 is formed so as to cover the polymer surface without leaving any gap, there is also an advantage that hydrophilicity and gas permeation proofness thereof can be enhanced. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012144387(A) 申请公布日期 2012.08.02
申请号 JP20110002468 申请日期 2011.01.07
申请人 DENSO CORP;UNIV OF TOKYO 发明人 YAMADA HIDEO;KITAMURA YASUHIRO;SUGIYAMA MASAKAZU;SHIMOGAKI YUKIHIRO;MOMOSE TAKESHI
分类号 C01B13/14;C01B33/12;C01G45/02 主分类号 C01B13/14
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