SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device having a thin-film transistor with stable electrical characteristics.

SOLUTION: Boron elements or aluminum elements are contained in an insulating layer covering an oxide semiconductor layer of a thin-film transistor. The insulating layer containing the boron elements or the aluminum elements is formed by the spattering method using a silicon target or a silicon oxide target containing the boron elements or the aluminum elements. Additionally, the oxide semiconductor layer of the thin-film transistor is covered with an insulating layer containing antimony elements (Sb) or phosphorus elements (P) instead of the boron elements.

COPYRIGHT: (C)2012,JPO&INPIT