发明名称 METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP
摘要 A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.
申请公布号 US2012196391(A1) 申请公布日期 2012.08.02
申请号 US201113231715 申请日期 2011.09.13
申请人 TU PO-MIN;HUANG SHIH-CHENG;LIN YA-WEN;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 TU PO-MIN;HUANG SHIH-CHENG;LIN YA-WEN
分类号 H01L33/20;B82Y40/00 主分类号 H01L33/20
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