发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP |
摘要 |
A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.
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申请公布号 |
US2012196391(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201113231715 |
申请日期 |
2011.09.13 |
申请人 |
TU PO-MIN;HUANG SHIH-CHENG;LIN YA-WEN;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
TU PO-MIN;HUANG SHIH-CHENG;LIN YA-WEN |
分类号 |
H01L33/20;B82Y40/00 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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