发明名称 |
SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE |
摘要 |
A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123). |
申请公布号 |
US2012193635(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201013500023 |
申请日期 |
2010.09.21 |
申请人 |
MATSUKIZONO HIROSHI;KIMURA TOMOHIRO;OGAWA HIROYUKI;SHARP KABUSHIKI KAISHA |
发明人 |
MATSUKIZONO HIROSHI;KIMURA TOMOHIRO;OGAWA HIROYUKI |
分类号 |
H01L29/786;H01L21/20;H01L29/02 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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