| 摘要 |
<p>In this method for manufacturing a silicon epitaxial wafer, an epitaxial layer is laminated by epitaxially growing a silicon single crystal on a silicon single crystal substrate. The method is characterized in that the epitaxial layer having a resistivity of 0.5-2,000 ·cm is grown at a growing speed of 3-15 µm/min, on the silicon single crystal substrate, which has a resistivity of 0.5-10.0 m ·cm, and which is doped with phosphorus or arsenic. Consequently, quantity of auto-doping from the substrate to the epitaxial layer during epitaxial growing is suppressed, and an epitaxial wafer having excellent resistance distribution and film thickness distribution can be obtained.</p> |
