| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce area. <P>SOLUTION: A nonvolatile semiconductor memory device includes a plurality of memory strings 200. Each of the memory strings includes a pair of columnar parts A; a semiconductor layer SP having a coupling part B formed to couple lower ends of the pair of columnar parts; a control gate CG which is orthogonal to the columnar parts; a first selection gate SGS which is orthogonal to one of the pair of columnar parts and formed above the control gate; a second selection gate SGD which is orthogonal to the other of the pair of columnar parts, formed above the control gate, and is integral with the first selection gate at the same level; a memory cell transistor MTr which is formed at each of intersections of the columnar parts and the control gate; a first selection transistor SSTr which is formed at each of intersections of the columnar parts and the first selection gate; and a second selection transistor SDTr which is formed at each of intersections of the columnar parts and the second selection gate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
