发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 A plasma processing apparatus includes a processing vessel, a depressurizing part, a placing part, a discharge tube, an introduction waveguide, a gas-supplying part, a transport tube, and a first temperature-detecting part. The processing vessel is able to maintain an atmosphere. The depressurizing part reduces the internal pressure of the processing vessel. The placing part places an object to be processed. The discharge tube has a region generating plasma therein and being provided at a position separated from the processing vessel. The introduction waveguide causes microwave emitted from a microwave-generating part to propagate therethrough to introduce the microwave into the region generating the plasma. The gas-supplying part supplies a process gas to the region generating the plasma. The transport tube communicates the discharge tube with the processing vessel. The first temperature-detecting part detects temperature of the discharge tube.
申请公布号 US2012192953(A1) 申请公布日期 2012.08.02
申请号 US201013387635 申请日期 2010.07.28
申请人 MATSUSHIMA DAISUKE;SHIBAURA MECHATRONICS CORPORATION 发明人 MATSUSHIMA DAISUKE
分类号 E03B7/07 主分类号 E03B7/07
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