发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which eliminates deposits adhered to a low temperature component in a gap between two components having a large temperature difference without lowering the operation rate of the substrate processing apparatus. <P>SOLUTION: In a substrate processing apparatus 10, a chamber 11 houses a wafer W, and a focus ring 25 encloses a periphery of the wafer W placed in the chamber 11. A side surface protection member 26 transmits laser light, and a laser light radiation device radiates the laser light to the side surface protection member 26. In the focus ring 25, an inner focus ring 25a is located adjacent to the wafer W and is cooled, and an outer focus ring 25b encloses the inner focus ring 25a and is not cooled. A facing surface of the side surface protection member 26 faces a gap between the inner focus ring 25a and the outer focus ring 25b. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012146743(A) 申请公布日期 2012.08.02
申请号 JP20110002251 申请日期 2011.01.07
申请人 TOKYO ELECTRON LTD 发明人 YAMAWAKI JUN;KOSHIMIZU CHISHIO
分类号 H01L21/3065 主分类号 H01L21/3065
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