| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phosphorus-containing copper anode for electrolytic copper plating, with which the generation of anode slime is suppressed and the generation of plating defects such as contamination or projections on the surface of a material being plated such as a semiconductor wafer is prevented even when a fine copper wiring is formed on a semiconductor wafer or the like. <P>SOLUTION: In the phosphorus-containing copper anode for electrolytic copper plating, the content of Zr is 5-10 ppm by weight, the content of phosphorus is 100-800 ppm by weight, and the balance is composed of copper and inevitable impurities. <P>COPYRIGHT: (C)2012,JPO&INPIT |
