摘要 |
An illumination system of a microlithographic projection exposure apparatus (10) comprises an optical integrator (60) having a plurality of light entrance facets (100) and a beam deflection array (38) of reflective or transparent beam defleeting elements (40). Each beam deflecting element (40) is configured to illuminate a spot (98) on the optical integrator (609 at a position that is variable by changing a deflection angle produced by the beam deflecting element (40). The illumination system further comprises a control unit (90) which is configured to control the beam deflection elements (40) in such a manner that a light pattern (108, 114, 118) assembled from the spots (98) on at least one of the light entrance facets (100) is varied in response to an input command that a field dependency of the angular irradiance distribution in a mask plane (88) shall be modified. |