| 摘要 |
Disclosed is a light emitting device a substrate; a light emitting structure disposed on the substrate comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a conductive layer disposed on the second conductive type semiconductor layer; a first electrode part disposed on the conductive layer, with at least predetermined region in contact with the first conductive type semiconductor layer, passing through the conductive layer, the second conductive type semiconductor layer and the active layer; a first insulation layer disposed between the conductive layer and the first electrode part, between the second conductive type semiconductor layer and the first electrode part and between the active layer and the first electrode part; a second electrode part disposed on the conductive layer; and a second insulation layer disposed between the conductive layer and the second electrode part, wherein at least predetermined region of the second electrode part is in contact with the conductive layer, passing through the second insulation layer. |
