发明名称 |
ELECTRONIC MEMBER WHEREIN BARRIER-SEED LAYER IS FORMED ON BASE |
摘要 |
It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 50 at.% and the noble metal at a ratio of equal to or greater than 5 at.% and equal to or less than 50 at.%. The noble metal is preferably one or more kinds of metals selected from the group consisting of ruthenium, rhodium, and iridium. |
申请公布号 |
EP2237313(A4) |
申请公布日期 |
2012.08.01 |
申请号 |
EP20090721789 |
申请日期 |
2009.02.19 |
申请人 |
NIPPON MINING & METALS CO., LTD. |
发明人 |
SEKIGUCHI, JUNNOSUKE;IMORI, TORU |
分类号 |
H01L21/768;C23C14/14;C25D7/12;H01L21/3205;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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