| 摘要 |
<p>A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less than 2.8 eV and not more than 3.4 eV or a boron phosphide (BP)-base mixed crystal which contains the boron phosphide (BP) and which is represented by the formula: B<SUB>alpha</SUB>Al<SUB>beta</SUB>Ga<SUB>gamma</SUB>In<SUB>1-alpha-beta-gamma</SUB>P<SUB>delta</SUB>As<SUB>epsilon</SUB>N<SUB>1-delta-epsilon</SUB> (0<alpha<=1, 0<=beta<1, 0<=gamma<1, 0<alpha+beta+gamma<=1, 0<delta<=1, 0<=epsilon<1, 0<delta+epsilon<=1).</p> |
