发明名称 |
GATE STRUCTURES, METHODS OF FORMING GATE STRUCTURES, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME |
摘要 |
<p>PURPOSE: A gate structure, a forming method thereof, and a method of manufacturing a semiconductor device using the same are provided to prevent an electric field from becoming concentrated on the gate structure by forming a second oxide film on a nitride film through an anisotropic plasma oxidation process. CONSTITUTION: A tunnel insulating film pattern(115) and a floating gate(125) are successively formed on a substrate(100). A first oxide film and a nitride film are successively formed on the floating gate. A dielectric layer pattern(185) is formed on the upper side and a sidewall of the floating gate and a sidewall of the tunnel insulating film pattern. The dielectric layer pattern comprises a first oxide film pattern(155), a nitride pattern(165), and a second oxide film pattern(175). A control gate(195) is formed on the dielectric layer pattern.</p> |
申请公布号 |
KR20120085360(A) |
申请公布日期 |
2012.08.01 |
申请号 |
KR20110006617 |
申请日期 |
2011.01.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUNG HWAN;HEO, SUNG HO;CHOI, JAE HO;LIM, HUN HYEONG;HWANG, KI HYUN;LEE, WOO SUNG |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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