| 摘要 |
<p>A method for non-destructive reading of a logic datum to be read stored in a memory (10) including a first word line (18a), a first bit line (16a), a second bit line (17a), and a first ferroelectric transistor (14) including a layer of ferroelectric material (26) in a stable state of polarization that can be associated to a high logic value or a low logic value of the logic datum to be read; the ferroelectric transistor is connected between the first and second bit lines, and has a control terminal (20c) coupled to the first word line. The method comprises the steps of: applying to the first word line (18a) a reading voltage (V read ) such as not to cause a variation of the stable state of polarization of the layer of ferroelectric material (26); generating a difference of potential (V sense ) between the first and second bit lines (16a, 17a); generating an output current (i TOT ); comparing the output current (i TOT ) with a plurality of comparison values; and determining the logic value of the logic datum to be read on the basis of the comparison.</p> |
