| 发明名称 |
HIGH PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUSES, METHODS, AND COMPOSITIONS PRODUCED THEREWITH |
| 摘要 |
A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers. |
| 申请公布号 |
KR20120085743(A) |
申请公布日期 |
2012.08.01 |
| 申请号 |
KR20127006466 |
申请日期 |
2010.08.12 |
| 申请人 |
GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC. |
发明人 |
DIETZ NIKOLAUS |
| 分类号 |
H01L21/205;C23C16/34;C23C16/44 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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