METHOD AND DEVICE FOR ETCHING BACK A SEMICONDUCTOR LAYER

摘要

The invention relates to a method for at least partially etching back a semiconductor layer (1) of a substrate (3), wherein the substrate (3) is arranged at least partially in an etching solution (5) and wherein areas of the semiconductor layer (3) located outside the etching solution (5) are at least partially removed by means of reactive vapors (11) originating from the etching solution (5), and a device for performing the method.