LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A lateral double-diffused metal-oxide semiconductor (LDMOS) and a manufacturing method thereof are provided to prevent insertion of electrons or holes into a semiconductor substrate generated when voltage is applied to a drain. CONSTITUTION: A second conductivity type buried layer(302) is formed inside a first conductivity type epitaxial layer(300). A high voltage second conductivity type well(304) is formed on an upper portion in one region of the second conductivity type buried layer. A first conductivity type drain extension region(308) is formed on the upper portion of another region of the second conductivity type buried layer. A second conductivity type drain extension region(310) is formed inside a partial region of the first conductivity type drain extension region. The second conductivity type drain extension region includes a gate pattern and a drain region.