发明名称 |
Beam-induced deposition of low-resistivity material |
摘要 |
An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 µ©·cm. |
申请公布号 |
EP2481829(A2) |
申请公布日期 |
2012.08.01 |
申请号 |
EP20120152793 |
申请日期 |
2012.01.27 |
申请人 |
FEI COMPANY |
发明人 |
RANDOLPH, STEVEN;CHANDLER, CLIVE |
分类号 |
C23C16/04;C23C16/34;C23C16/40;C23C16/48;H01J37/317 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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