发明名称 |
SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD |
摘要 |
PURPOSE: A substrate processing apparatus and a method thereof are provided to maximize a cleaning effect of a processing chamber by minimizing the loss of radical energy from cleaning gas. CONSTITUTION: A processing chamber(110) forms a sealed process space(S). The processing chamber includes a chamber body(112) and an upper lid(111) attachably and detachably combined with the chamber body to be. A gas supply part(150) supplies gas to the process space. The gas supply part includes a first diffusion space(DA1) and a second diffusion space(DA2). A substrate support part(130) is installed in the processing chamber and supports a substrate(10). |
申请公布号 |
KR20120084898(A) |
申请公布日期 |
2012.07.31 |
申请号 |
KR20110006208 |
申请日期 |
2011.01.21 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
PARK, HAE YOON;PARK, SANG JUN |
分类号 |
H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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