发明名称 SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
摘要 PURPOSE: A substrate processing apparatus and a method thereof are provided to maximize a cleaning effect of a processing chamber by minimizing the loss of radical energy from cleaning gas. CONSTITUTION: A processing chamber(110) forms a sealed process space(S). The processing chamber includes a chamber body(112) and an upper lid(111) attachably and detachably combined with the chamber body to be. A gas supply part(150) supplies gas to the process space. The gas supply part includes a first diffusion space(DA1) and a second diffusion space(DA2). A substrate support part(130) is installed in the processing chamber and supports a substrate(10).
申请公布号 KR20120084898(A) 申请公布日期 2012.07.31
申请号 KR20110006208 申请日期 2011.01.21
申请人 WONIK IPS CO., LTD. 发明人 PARK, HAE YOON;PARK, SANG JUN
分类号 H01L21/205;H01L21/302;H01L21/3065 主分类号 H01L21/205
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