Method for recording optical diffraction gratings in the nanodimensional metal - chalcogenide glass - conductor structure

摘要

The invention relates to the semiconductor photography and holography, in particular to methods for the formation of periodic structures in nanodimensional layers that are used in optoelectronics and microelectronics.The method for recording optical diffraction gratings in the nanodimensional metal - chalcogenide glass - conductor structure includes the exposure of structure to coherent radiation from the chalcogenide glass absorption region, in which as a nanodimensional structure is used the Al - As2Se3 - conductor structure, in which the thickness of chalcogenide glass As2Se3 does not exceed 500 nm, and the thickness of the aluminum layer does not exceed 50 nm, at the same time during exposure to it is applied an electric field with the intensity of 104…106 V/cm.The result of the invention is to increase the resistance to light action before and after exposure.